The 20th Microscopy of Semi Conducting Materials will take place in Oxford in 2017.
The conference will focus on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques including scanning probe microscopy, X-ray topography and diffraction will also be featured.
Developments in materials science and technology covering the complete range of elemental and compound semiconductors will be described.
Registration is now open
Standard rate £575
RMS/IoP Member rate £475
Student rate £325
RMS/IoP Student Member rate £280
- 19:00Drinks reception
- 09:00Welcome remarks Dr Thomas Walther and Dr Lewys Jones
- 09:15 Symposium A - Analytical TEM
Chair: Dr Lewys Jones
Quantitative Characterization of Semiconducting Materials with STEM
Professor James LeBeau (Invited Speaker)
- 10:00Local structure and composition versus the optical properties of InGaN/GaN QWs for emission in and past the green gap
- 10:20Mg dopant analysis in (Al)GaN by atom probe tomography and off-axis electron holography
- 10:40Composition limitation in nominal InN layers coherent on GaN
- 11:00From 2D to 3D Electron Ptychographic Reconstruction
- 11:20Lattice site analysis of cerium dopants in calcium scandate crystals
- 11:40Lunch break
- 13:30 Symposium B - CL
Chair: Dr Thomas Walther
SEM cathodoluminescence and EBIC study of widegap semiconductor materials and devices
Professor Takashi Sekiguchi (Invited speaker)
- 14:15Cathodoluminescence investigations of III-Nitride micro pyramids and platelets
- 14:35Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
James Thomas Griffiths
- 15:00Coffee and Tea Break
- 15:30 Symposium C - Lattice Defects
Chair: Professor Kerstin Volz
Atomic structure of extended defects in wurtzite semiconductors
Dr Pierre Ruterana (Invited Speaker)
- 16:15Correlation of structural, optical and lasing properties of 240 nm laser structures
- 16:35Atom Probe Characterisation of Individual Dislocations in Multicrystalline Silicon
- 17:00Poster session A-C, with drinks reception
- 09:00 Symposium D - Nanowires
Chair : Dr Anna Mogilatenko
Non-radiative Ʃ3 (112) Boundaries in Semiconductor Nanowires
Dr Ana Sanchez (Invited Speaker)
- 09:45Fluorescence and Raman sideband cooling in II-VI semiconductors nanostructures
Professor Xiong Qihua (Invited Speaker)
- 10:30Study of Core-Shell InAlN Nanowire Formation Mechanism by Plan-View Transmission Electron Microscopy
- 10:50TEM and electron holography study of wurtzite GaAs based nanowires with MnGa and MnAs:GaAs magnetic shells
- 11:10Mapping electrostatic potential variations in individual heterojunctions of PbS core - CdS arm nano-multipod heterostructures by off-axis electron holography
- 11:30Lunch break with social activity TBC
- 14:15 Symposium E - Strained Layers and QWs
Chair: Professor James LeBeau
Atomically resolved insights into semiconductor heterointerfaces
Professor Kerstin Volz (Invited Speaker)
- 14:35Time-resolved Scanning Tunneling Spectroscopy of single silicon dangling bonds
- 15:00Mechanism of thermal degradation of InGaN quantum wells
- 15:202D Strain mapping on AlGaN/GaN nanowire arrays using STEM Moiré interferometry
- 15:40Transition from quantum well to quantum wire behavior in ZnO-MgZnO non-polar heterostructures assessed by three-dimensional atomic scale microscopy
Enrico Di Russo
- 16:00Large Angle Convergent Beam Electron Diffraction analysis of (a+c)-type misfit dislocations in InGaN epilayers grown on (0001) GaN by plasma-assisted molecular beam epitaxy
- 16:20Atomic structure of “W”- quantum well heterostructures investigated by aberration-corrected STEM
- 16:40Influence of surface relaxation of strained layers on atomic resolution ADF STEM imaging
- 17:00Poster session D & E with drinks reception
- 09:00 Symposium F - Thin Films
Chair: Dr Pierre Ruterana
Study of defect density and compositional homogeneity in AlN/AlGaN layers for application in UV emitters
Dr Anna Mogilatenko (Invited Speaker)
- 09:45GaSb/GaInAs and GaSb/GaInP bond interfaces for high efficiency solar cells: Characterization by atomic resolution HR(S)TEM and XEDS
- 10:05Structural Characterization of SnS Crystals formed by Chemical Vapor Deposition
Ankit Nalin Mehta
- 10:25Structure of pseudomorphic Fe3Si/Ge/Fe3Si thin film stacks on GaAs(001)
- 10:45Bonding of III-V semiconductors to Si platform for hybrid optoelectronic devices
Eric Le Bourhis
- 11:05TEM study of the as-deposited and annealed Ga2O3 films grown by vapor phase epitaxy
- 11:30Techno bites
- 12:00Lunch break
- 13:30 Symposium G - SPM & APFIM
Chair: Professor Xiong Qihua
Grain boundary segregation in Si studied by atom probe tomography combined with TEM and ab-initio calculations
Professor Yutaka Ohno (Invited Speaker)
- 14:15Assessing advantages and limitations of atom probe tomography for the nanoscale interpretation of the optical properties of III-nitride heterostructures
- 14:35Time-resolved Scanning Tunneling Spectroscopy of single silicon dangling bonds
- 14:55Local deep level transient spectroscopy for two-dimensional trap distribution in MOS interface using super-higher-order scanning nonlinear dielectric microscopy
- 15:30Poster session G-J with drinks reception
- 19:00Conference Banquet
- 09:15 Symposium H - SEM & FIB
Chair: Professor Takashi Sekiguchi
Helium ion microscopy for two-dimensional semiconductor applications
Professor Hongzhou Zhang (Invited Speaker)
- 10:00FIB-fabricated complex-shape 3D chiral photonic silicon nanostructures
- 10:20Coffee and Tea Break
- 10:40 Symposium J - Advanced Devices
Chair: Dr Ana Sanchez
Semiconductor and metal nanoantennas: Directional emitters and absorbers of polarized light probed by Fourier microscopy
Professor Jaime Gomez Rivas (Invited Speaker)
- 11:25Grain boundaries in thin film solar cells
Professor Ken Durose (Invited Speaker)
- 12:10Influence of the Electron Transport Layer on the Microstructure and Hysteresis of Perovskite Solar Cells
- 12:30Elucidation of conducting filament formation in nanoresistive switching in Ni-HfO2-Si capacitors by in-situ TEM
- 12:50In-situ biasing of conductive bridge resistive memory devices observed in a Transmission Electron Microscope
- 13:10Closing remarks
Dr Thomas Walther and Dr Lewys Jones
Dr Thomas Walther
University of Sheffield
Thomas is Reader in Advanced Electron Microscopy at the University of Sheffield and Director of the Kroto Centre for High Resolution Imaging and Analysis.
His research areas include electron microscopy method development and instrumentation, in particular HREM, EFTEM, ADF-STEM, EELS, ELNES, EDX.
A focus is on quantitative analysis of semiconductor quantum wells and quantum dots, but also the study of interdiffusion and segregation at grain boundaries and within metal nano-particles.
He runs the Microscopy of Semiconducting Materials conference series which is alternatingly held in Oxford and Cambridge, always in odd years.
Dr Lewys Jones FRMS
University of Oxford
After a first degree in Material Science, I received my PhD from the Department of Materials at the University of Oxford in 2013. This focussed on two themes; scanning stability in the aberration-corrected scanning transmission electron microscope (AC-STEM) and also on applications of focal series of annular dark-field data. In 2014 a software plug-in for Digital Micrograph to correct scan-noise (the Jitterbug software) was launched in collaboration withHREM Research. More recently in 2016, another plug-in to bring fast non-rigid registration to DM was launched (SmartAlign).
I sit on the Editorial Board of the journal Advanced Structural and Chemical Imaging, and have been a Fellow of the Royal Microscopical Society since 2015.
Professor Ken Durose
University of Liverpool, UK
Ken Durose is Professor of Applied Physics at the University of Liverpool where he is Director of the Stephenson Institute for Renewable Energy. He was educated at Durham University, receiving his PhD in 1987 after which he worked at British Telecom Research Labs on laser photochemical processing for III-V communication devices. Thereafter he took up a faculty position at Durham and developed interests in the microstructure of II-VI semiconductors and crystal growth. This was an ideal starting point for joining EU programmes on solar photovoltaic materials and solar cells, and he developed interests in device fabrication and the mechanisms by which the efficiencies are limited - including by both extended and point defects. This work on CdTe devices was expanded to include growth and doping studies on transparent conductors and also new and sustainable materials and devices for photovoltaics, including complex chalcogenides and hybrid perovskites. He was principal investigator of the UK PV programme for two cycles from 2004 – 2012 and is presently Director of the EPSRC Centre for Doctoral Training in New and Sustainable PV. He has been a Fellow of the RMS since 1989.
Professor Jaime Gomez-Rivas
Eindhoven University of Technology, the Netherlands
Jaime Gómez Rivas studied Physics and Astrophysics at the Universidad Complutense of Madrid (Spain) and at the Université de Liege (Belgium). In 2002 he received the PhD degree at the University of Amsterdam (The Netherlands) for his research on Anderson localization of light. He worked as postdoctoral researcher at the RWTH University in Aachen (Germany) from 2002 until 2005 on THz photonics and plasmonics. In 2005 Gómez Rivas become project leader at the FOM Institute for Atomic and Molecular Physics, AMOLF, in Amsterdam and at Philips Research in Eindhoven (The Netherlands), setting up the group Surface Photonics working on nano- and THz-photonics. In 2010 he was appointed as part-time professor at Eindhoven University of Technology (TU/e) and group leader at AMOLF. In 2015 Gómez Rivas moved with his group to the Dutch Institute for Fundamental Energy Research in Eindhoven and he became full-professor at TU/e. Gómez Rivas is co-author of over 120 publications in peer-reviewed journals and co-inventor of 20 patents and patent applications.
Professor James Lebeau
North Carolina State University, USA
James earned his B.S. in Materials Science & Engineering from Rensselaer Polytechnic Institute in 2006 and his Ph.D. from the University of California Santa Barbara in 2010. After his graduate work, he joined the Department of Materials Science and Engineering at North Carolina State University as a faculty member in 2011 and was promoted to Associate Professor in 2016. His research focuses on applying and developing transmission electron microscopy techniques to determine the atomic structure and chemistry of materials. For his research, James has been honored with numerous awards including the NSF CAREER award and the AFOSR Young Investigator grant. He has been recognized by the Microanalysis Society with a Distinguished Scholar award, the Birks Award, and the K.F.J Heinrich award recognizing a scientist under the age of forty for distinguished technical contributions in the field. Most recently, his work was selected for a 2016 Best Paper award in the journal Microscopy and Microanalysis. Since 2006, he has co-authored over 60 journal articles, which have been cited over 1500 times.
Dr Anna Mogalitenko
Ferdinand Braun Institute, Germany
Anna Mogilatenko has studied Materials Science and obtained an Engineer Degree (Dipl.-Ing.) at National Technical University of the Ukraine in Kiev. Her PhD (Physics Department of Chemnitz University of Technology, Germany) was focused on transmission electron microscopy analysis of thin silicide films. As a postdoc at Humboldt University of Berlin she started analysing group-III nitride materials. Her current research interests at Ferdinand-Braun-Institute include analysis of defect distributions and compositional changes in AlGaN-based heterostructures. This allows for understanding, developing and improving of devices like photodetectors and light emitting and laser diodes operating in the ultraviolet wavelength range. The applied analyses techniques include diffraction contrast analysis, HAADF STEM, CBED, HRTEM, EDXS and EELS as well as CL in SEM.
Professor Yutaka Ohno
IMR Tohoku University, Japan
I am working in the Physics of Crystal Defects division in IMR as an associate professor (http://lab-defects.imr.tohoku.ac.jp/ohno/ohno.html). A focus is on quantitative analyses of the impurity segregation ability of grain boundaries in Si and compounds by atom probe tomography (with an impurity detection limit less than 0.005 at.% on a boundary simultaneously with a spatial resolution less than 0.4 nm) combined with HAADF-STEM and ab-initio calculations, but also the study of atomistic structures of semiconductor nanostructures by optical measurements (CL, PL, SNOM) under TEM.
Dr Pierre Ruterana
CIMAP ENSICAEN, France
Dr. Pierre Ruterana is Doctor es Science in Materials Science. His is Director of Research in CNRS (French National Centre for Scientific Research). He is Head of the Research TEAM "Properties of materials for energy savings" PM2E in Laboratory CIPAM (Centre de Recherche sur les Matériaux, les Ions et la Photonique). Dr Ruterana is specialist in high resolution electron microscopy with applications to numerous materials including semiconductors, ceramics, catalysts and nanomaterials. He joined CNRS in 1991, since then he has trained some 20 PhD students, collaborated in many national and international projects, coordinating most of them. He has contributed to more than 300 scientific publications in peer reviewed journals, and delivered more than 70 invited talks at international conferences. Up to now, he has been the principal organiser of more than 10 workshops and/or symposia at international conferences.
Dr Ana Sanchez
University of Warwick, UK
Ana is Principal Research Fellow at the University of Warwick. Her research interests are based on developing the field of advanced transmission electron microscopy techniques and materials characterization, mainly in the areas of semiconductors (including 2D dichalcogenides) and ferroelectric materials. She has been collaborating with world-leading groups using advanced microscopy techniques both to determine defect structure in materials and the challenging and technologically relevant problem of determining strain and composition at nanometer scale.
Professor Takashi Sekiguchi
National Insitute of Materials Science, Japan
Takashi Sekiguchi has been engaged in the study of defects in semiconductors using cathodoluminescence and EBIC for 30 years and published more than 400 papers. His started this work on the dislocation related luminescence in Si. Then, he has been studying wide variety of materials from multicrystalline Si for solar cells, widegap semiconductors like GaN and SiC, III-V quantum structures, and various types of nanoparticles.
Professor Kerstin Volz
Universitat Marburg, Germany
Prof. Kerstin Volz is full Professor for Experimental Physics and Co-Leader at the STRL (Structure and Technology Research Lab) of Philipps University Marburg since 2009.
She received her diploma in physics from Augsburg University in 1996. In 1999 she obtained her PhD from the same university. After several research visits at Osaka National Research Institute and Nagasaki Institute of Technology in Japan, as well as a postdoctoral stay at Stanford University, she joined Philipps-Universität Marburg as a Junior Group Leader (in the framework of a Topical Research Group of the DFG). After a professorship at the Humboldt-Universität of Berlin, she was appointed as a Heisenberg professor in Marburg.
She presently serves there as speaker of the Research Training Group “Functionalization of Semiconductors”, which started in 2012. She is also the vice-coordinator of the collaborative research center “Structure and Dynamics of Internal Interfaces”. She has received the following awards: Graduate Student Award of EMRS (1996); Feodor-Lynen scholarship of Alexander von Humboldt foundation (2001); guest professorship of Humboldt Universität of Berlin (2008); Heisenberg professorship of DFG (2008); and the Patricia Pahamy Prize for best teaching (2009). Her research interests include the synthesis (MOVPE) and quantitative transmission electron microscopy of novel functional materials.
Professor Qihua Xiong
Nanyang Technological Univeristy Q
ihua Xiong received his B.S. degree in physics from Wuhan University in 1997, and then finished three years graduate studies at the Shanghai Institute of Applied Physics, Chinese Academy of Sciences. He went to the United States in 2000 and received Ph.D. degree under the supervision of Prof. Peter C. Eklund from The Pennsylvania State University in 2006. After three years postdoctoral experience in Prof. Charles M. Lieber’s group at Harvard University, he joined Nanyang Technological University as an assistant professor in 2009 and promoted to Nanyang Associate Professor in 2014. He was promoted to full Professor in 2016 recently. He is a Fellow of Singapore National Research Foundation awarded in 2009 and the inaugural NRF Investigatorship Award by Singapore National Research Foundation. Prof. Xiong’s research focuses on light-matter interactions of emergent quantum matter by optical spectroscopy approaches. He recently ventured into the field of 2D layered materials and laser cooling of solids.
Professor Hongzhou Zhang
Trinity College Dublin
Prof. Zhang received his PhD in Applied Physics at Rice University (US) in 1999. He worked as a Research Fellow at the Australian National University for three years before he joined Trinity College Dublin (TCD) in 2009. He is now an Associate Professor at the School of Physics, TCD and a Principal Investigator at CRANN. His research is focused on the applications of helium-ion microscopy in nanomaterial imaging and modification.
Prof Ken Durose - Grain boundaries in thin film solar cells
Prof Jaime Gomez Rivas - Semiconductor and metal nanoantennas: Directional emitters and absorbers of polarized light probed by Fourier microscopy
Prof James LeBeau - Quantitative Characterization of Semiconducting Materials with STEM
Dr Anna Mogilatenko - Study of defect density and compositional homogeneity in AlN/AlGaN layers for application in UV emitters
Prof Yutaka Ohno - Grain boundary segregation in Si studied by atom probe tomography combined with TEM and ab-initio calculations
Prof Xiong Qihua - Fluorescence and Raman sideband cooling in II-VI semiconductors nanostructures
Dr Pierre Ruterana - Atomic structure of extended defects in wurtzite semiconductors
Dr Ana Sanchez - Non-radiative Ʃ3 (112) Boundaries in Semiconductor Nanowires
Prof Takashi Sekiguchi - SEM cathodoluminescence and EBIC study of widegap semiconductor materials and devices
Prof Kerstin Volz - Atomically resolved insights into semiconductor heterointerfaces
Prof Hongzhou Zhang - Helium ion microscopy for two-dimensional semiconductor applications
The registration fees are as follows:
Standard rate £575
RMS/IoP Member rate £475
Student rate £325
RMS/IoP Student Member rate £280
Registration fee includes all lunches and refreshments for the 4-day meeting, 3 evening meals, a banquet dinner, wine reception and an abstract booklet.
Accommodation is £75 a night including bed and breakfast for a en-suite room. For details on how to book this please see below.
Venue for the meeting
MSM XX is taking place at Lady Margaret Hall (LMH), Norham Gardens, Oxford OX2 6QA
The accommodation is also located at Lady Margaret Hall.
To find out more information about the college, please visit the Lady Margaret Hall website.
Travelling to the venue
LMH is a short walk from Oxford city centre and as such, due to its location, there is no parking available. It is therefore strongly advised to use public transport or taxis.
Oxford has 2 train stations, both with direct links to London.
Oxford also has regular coach services to and from Heathrow, Gatwick and Birmingham Airport.
Accommodation is not included in your registration fee; however, the RMS has made arrangements for you to book your own accommodation to stay at LMH at a preferential rate of £75 a night.
To book your accommodation please visit http://conference.lmh.ox.ac.uk/accommodation/. Please use the Promotional code MSM2017 and select the dates which you would like to book.
Please note that you are only able to book accommodation with a credit/debit card. There is not an option to raise an invoice.
Dietary and Access requirements
The RMS is committed to our delegates’ health and wellbeing. Therefore, if you have any dietary or access requirements please contact Karina Lang.
Lady Margaret Hall, Oxford, OX2 6QA
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- £475 Member rate
- £325 Student rate
- £575 Standard rate