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 Conference Co-Chairmen
John Hutchison (Oxford)
Pete Nellist (Oxford)
Thomas Walther (Sheffield)
Tony Cullis (Sheffield)
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| Registration for residential delegates to this event is now open |
The residential package includes accommodation at the event venue and is at an extremely competitive rate. All meals, including the banquet, are included in this package and you will be on site for the duration of the event. |
| Registration for day package delegates is open now |
The day delegate package include 4 days attendance at the meeting, refreshments, lunches and the option to attend conference dinner on the Thursday night.
You will need to secure your own accommodation. |
The Proceedings of this conference will be published as an online citable resource that all delegates will have access to, and this is included in the registration fee.
At the Conference you will have the opportunity to pre-order the Proceedings as either a DVD or as a book at an additional charge. |
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 Endorsed by EMAG, Institute of Physics
Endorsed by the Materials Research Society
The conference will focus on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques including scanning probe microscopy and X-ray topography and diffraction will also be featured. Developments in materials science and technology covering the complete range of elemental and compound semiconductors will be described.
The main topic areas to be covered are as follows:
*The characterisation of as-grown semiconductors in both bulk and thin film forms.
*The study of nanostructures of all types from quantum dots, wires, etc to nanotubes.
*The investigation of lattice defect and impurity behaviour in semiconducting materials.
*The study of the effects of semiconductor processing treatments: oxidation, nitridation, ion implantation, annealing, silicidation, etc.
*The assessment of finished electronic devices, including studies of the influence of structural defects upon their behaviour and important new design features such as high/low-k dielectrics, etc.
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ABSTRACT SUBMISSION
The abstract submission deadline is 2 December 2008.
Please submit your abstract as a word document to victoria@rms.org.uk
All abstracts should be no more than 250 words in length and should not contain figures or references. Please indicate your preference for an oral or a poster presentation: the Organising Committee will carefully note any preference but cannot guarantee your preferred presentation option.
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Accommodation is included in the delegate package for the nights of 17th, 18th and 19th March 2009.
If you require rooms for additional nights, please contact victoria@rms.org.uk |
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Invited Speakers and Provisional Titles
Dr D Bell (Harvard University, Cambridge, USA)
• The Emerging Application of He+ Ion Microscopy to Semiconductor Technologies
Dr E Carlino (TASC, Trieste, Italy)
• Quantitative Z-Contrast Atomic Resolution Studies of Semiconductor Nanostructured Materials
Prof D Cherns (University of Bristol, UK)
• GaN Devices Based on Nanorods
Prof A Craven (University of Glasgow, UK)
• STEM-EELS Investigations of High-k Dielectrics
Prof R Dunin-Borkowski (Technical University of Denmark)
• Prospects and Challenges for Electron Holography of Doped Semiconductors
Prof D Gersthen (University of Karlsruhe, Germany)
• On the Incorporation of Indium in InAs-Based Quantum Structures
Dr F Glas (CNRS-LPN, Marcoussis, France)
• TEM of Growth, Structure and Phase Transitions of Epitaxial III-V Nanowires
Dr M Hecker (AMD, Dresden, Germany)
• Strain Analysis by NanoRaman Spectroscopy in Si Structures for CMOS Technology
Prof R Hull (Rensselaer Institute, Troy, USA)
• Templated Assembly of Epitaxial Semiconductor Nanostructures
Dr C Kisielowski (NCEM–LBNL, Berkeley, USA)
• Observing cluster formation in InxGa1-xN Alloys and Its Relation to Detection Limits for Single Atoms
Prof S Kodambaka (UCLA, USA)
• Role of Al in Au-Catalysed Growth of Si Nanowires
Prof S Molina (University of Cadiz, Spain)
• Exploring Semiconductor Quantum Dots and Wires by High Resolution Electron Microscopy
Prof S Tsukamoto (Anan National College of Technology, Japan)
• Investigations of InAs QD Formation on GaAs (001) by in situ STM during MBE Growth
Dr W Vandervorst (IMEC, Leuven, Belgium)
• Nanoscale Analysis of Planar and 3D Si Structures
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The RMS Annual Materials Lecture will take place on 18th March, and will be given
by Prof J Silcox (Cornell University, Ithaca, USA).
Materials Research with the Next Generation of Electron Microscopes |
Special conference sessions will focus attention on recent advances in a number of areas of particular current interest, for example:
*Developments in the use of high resolution imaging and analytical transmission electron microscopy: new methods of imaging, diffraction and spectroscopy; studies of bulk material, layers and interfaces.
*Advances in FIB milling and nanofabrication.
*The nature of epitaxial layers, superlattices and quantum well, wire and dot structures: strain relaxation, defect introduction, morphological distortion, self-organisation, luminescence.
*Wide bandgap semiconductors, especially III-nitrides.
*The structures of dislocations and defect boundaries in semiconductors.
*Advances in SiGe/Si for device structures such as HBTs, MOSFETs, terahertz emitters, etc.
*Metal-semiconductor contacts and silicides.
*The effects of processing treatments using both conventional and transient techniques.
*The exploitation of advanced scanning techniques: SEM-EBIC, SEM-CL, etc; STM, AFM, SCM, BEEM, etc.
A full programme will be available once the submitted talks have been chosen.
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| NanoFIB 2008, 16 March 2009, Oxford |
This one day meeting will concentrate on both the latest applications of the FIB technique and also the state-of-the-art in instrument development. The abstract deadline is 30 January 2009. Further information about the meeting and abstract submission can be obtained from the RMS or the meeting Chairperson Beverley Inkson. |
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