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Location:
University of Leeds
Date:
25 July 2005 - 29 July 2005
Contact:
Clare Oxenbury
Tel:
01865 248768
Fax:
01865 791237
Email:
clare@rms.org.uk
Website:
Event Description
The conference will focus on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques including scanning probe microscopy and X-ray topography and diffraction will also be featured. Developments in materials science and technology covering the complete range of elemental and compound semiconductors will be described.
The main topic areas to be covered are as follows:
The characterisation of as-grown semiconductors in both bulk and thin film forms.
The study of nanostructures of all types from quantum dots, wires, etc to nanotubes.
The investigation of lattice defect and impurity behaviour in semiconducting materials.
The study of the effects of semiconductor processing treatments
- oxidation, nitridation, ion implantation, annealing, silicidation, etc.
The assessment of finished electronic devices, including studies of the influence of structural defects upon their behaviour and important new design features such as high/low k dielectrics, etc.
The state of the art in analytical technique development from advances in FEGTEM nanoanalysis to exploitation of FIB milling for specimen preparation.
Special conference sessions will focus attention on recent advances in a number of areas of particular current interest, for example:
Developments in the use of high resolution imaging and analytical transmission electron microscopy
- studies of bulk material, layers and interfaces.
The nature of epitaxial layers, superlattices and quantum well, wire and dot structures
- strain relaxation, defect introduction, morphological distortion, self-organisation, luminescence.
Wide bandgap semiconductors, especially III-nitrides.
The structures of dislocations and defect boundaries in semiconductors.
Advances in SiGe/Si for device structures such as HBTs, MOSFETs, terahertz emitters, etc.
Metal-semiconductor contacts and silicides.
The effects of processing treatments using both conventional and transient techniques.
The exploitation of advanced scanning techniques
- SEM-EBIC, SEM-CL, etc
- STM, AFM, SCM, BEEM, etc.
Important topics will be highlighted in keynote presentations given by leading invited speakers.
Dr P E Batson (IBM TJ Watson Research Centre, Yorktown Heights)
Atomic Resolution STEM of Semiconductors
Dr B Daudin (CEA, Grenoble)
GaN Quantum Dots: Structural and Optical Properties
Dr D Donnet (Philips Semiconductors, Nijmegen)
FIB Applications for Semiconductor Device Failure Analysis
Dr R Dunin-Borkowski (Cambridge University)
Electron Holography of Doped Semiconductors: When does it work and is it quantitative?
Kazuo Furuya (NIMS)
Electron-Beam-Induced Deposition of Position and Size Controlled Structures in Nanometer Scale
Dr C Hetherington (Oxford University)
Aberration-corrected HREM/STEM for Semiconductor research
Prof H-L Hwang (National Tsing Huan University, Hsinchu)
Research Highlights and Impacts upon Industry for Nanoelectronics in the University System of Taiwan
Dr P M Koenraad (Eindhoven University of Technology)
Self-assembly of III-V Nanostructures Studied by Cross-Sectional STM
Dr A Lauwers (IMEC, Leuven)
Silicides for Advanced CMOS Devices
Prof S Mahajan (Arizona State University)
Origins and Reduction of Threading Dislocations in GaN Epitaxial Layers
Prof L Samuelson (Lund University)
Growth, Properties and Applications of Semiconductor Nanowires
Dr E Spiecker (Kiel University)
Novel Methods for Large Area Analysis of Misfit Dislocation Arrays in Semiconductor Heterostructures
Dr P Sutter (Brookhaven National Laboratory, Upton)
High Resolution Microscopy of SiGe/Si(100) Growth, Defects, Facets, Nanostructures
For a full programme of the Oral presentations at MSMXIV, please click on the following link:
Website Oral Programme MSMXIV.doc (MS Word - 72k)
For a full programme of the Poster presentations at MSMXIV please click on the following link:
Website Poster Programme MSMXIV.doc (MS Word - 71k)
The Proceedings of the conference will be published and contributed papers are requested in all the areas outlined above. Full conference papers will be required at the time of the event.
The deadline for receipt of initial abstracts was 3 December 2004. Abstracts should be 200-250 words in length. Figures and references are not permitted.
Equipment Exhibition
A table top equipment exhibition will take place at the conference on 14-15 April 2005. Companies with an interest in this exhibition should contact Allison Winton - allison@rms.org.uk for further details.
Please note, there is no parking available for delegates at either conference venue. We strongly suggest delegates use public transport. Anyone with mobility difficulties please contact Lucy Haworth.
Conference Co-Chairmen
Prof Tony Cullis FRS
Department of Electronic and Electrical Engineering
University of Sheffield
Sheffield
South Yorkshire S1 3JD
UK
tel: +44(0)114-222-5407
fax: +44(0)114-272-6391
E-mail: a.g.cullis@sheffield.ac.uk
Dr John Hutchison
Department of Materials
University of Oxford
Oxford OX1 3PH
UK
tel: +44(0)1865-273705
fax: +44(0)1865-273789
E-mail:john.hutchison@materials.ox.ac.uk
