Banner Image: a false colour STEM bright field image of a row of 4 identical SiGe MOSFET transistors
The conference will focus on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of electron microscopy. The latest developments in the use of other important microcharacterisation techniques including scanning probe microscopy, X-ray topography and diffraction will also be featured. Developments in materials science and technology covering the complete range of elemental and compound semiconductors will be addressed.
Scientific Organiser
Thomas Walther
Thomas is Reader in Advanced Electron Microscopy at the University of Sheffield and Director of the Kroto Centre for High Resolution Imaging and Analysis.
His research areas include electron microscopy method development and instrumentation, in particular HREM, EFTEM, ADF-STEM, EELS, ELNES, EDX.
A focus is on quantitative analysis of semiconductor quantum wells and quantum dots, but also the study of interdiffusion and segregation at grain boundaries and within metal nano-particles.
He runs the Microscopy of Semiconducting Materials conference series which is alternatingly held in Oxford and Cambridge, always in odd years.
RMS Organisers
Alessandra Reni
alessandra@rms.org.uk
+44 (0) 1865 254779
Contact Alessandra for RMS Event enquiries.
