Life Sciences

One of the most promising applications of fluorinated graphene lies in its role as a gate dielectric material in field-effect transistor (FET) architectures. Traditional graphene-on-insulator FETs often employ SiO2 as the gate dielectric, but this approach introduces charge trapping at the interface and degrades carrier mobility. While atomic layer deposition (ALD) of high-k dielectrics like Al2O3 and HfO2 offers improvements, it still necessitates seed layers due to graphene's hydrophobicity. Furthermore, graphene oxide (GO), although frequently used in dielectric roles, suffers from poor thermal stability, reducing its dielectric resistivity.

In contrast, fluorographene presents several dielectric advantages. Multi-layer fluorinated graphene demonstrates a very low dielectric constant of approximately 1.2 while maintaining superior frequency dispersion characteristics and surpassing 10 MV/cm breakdown electric field strength, which matches or exceeds the performance of bulk dielectrics such as Si3N4 and SiO2. The material demonstrates exceptional thermal stability since its properties remain stable throughout thermal annealing processes reaching 400°C in ambient air conditions, which proves its outstanding thermal durability and dependability for semiconductor processing applications.

Created: 15 Jul 2025 08:07:59 AM