Microscopy of Semi-Conducting Materials

Richard Beanland

University of Warwick; Coventry, UK; Optimising material quality in group III-antimonides on silicon; developing UltraRAM devices for low-energy data storage

Optimising material quality in group III-antimonides on silicon; developing UltraRAM devices for low-energy data storage

Nikolay Cherkashin

CEMES; Toulouse, France; Novel approach for displacement and strain mapping from HR-(S)TEM images of crystalline materials

Novel approach for displacement and strain mapping from HR-(S)TEM images of crystalline materials

Maria de la Mata

Universidad de Cadiz, Spain; Electron microscopy of radiation sensitive semiconductor composites

María de la Mata got her degree in Chemistry from the Universidad de Oviedo and her MsC in Materials Science and Technology from the Universidad Autónoma de Barcelona. She developed her PhD at the Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC) in 2015, focused on the atomic scale characterization of semiconductor nanomaterials by means of advanced electron microscopy tools. She got several postdoctoral positions, at the Instituto de Nanociencia y Nanotecnología de Cataluña, ICN2 (Spain), at Lund University (Sweden) and at the Universidad de Cádiz (Spain), where she joined to INNANOMAT Research Group, holding several postdoctoral researcher positions framed within different excellence programs, until date. Her research interests have moved from semiconductor non-planar nanostructures to a variety of material systems, covering polymer-based materials and (nano)composites, and going from detailed atomic scale analyses to the design of suitable strategies for the analysis of beam sensitive materials. She co-authors more than 60 publications at ISI indexed journals and two book chapters, reaching a total citation number of 1990 and an h factor of 25 (WoS).

Sarah Haigh

University of Manchester, UK

Talk title: Advanced STEM analysis of 2D materials and twisted heterostructures

Sarah Haigh is a Professor of Materials Characterisation at the University of Manchester, UK. Her research interests centre on improving our understanding of nanomaterials structure and properties using transmission electron microscope (TEM) imaging and analysis techniques. Her group focus on (i) advanced TEM characterisation of functional 2D materials and vertical stacked heterostructures (ii) developing in situ TEM imaging methods (iii) innovative characterisation of nanoparticle catalysts for sustainable energy. Before moving to the University of Manchester in 2010 she worked as consultant application specialist to JEOL UK. She completed undergraduate and doctorate degrees in Material Science at the University of Oxford (2004 and 2008). In her doctoral studies she developed exit wave restoration techniques from series of high resolution TEM images under the supervision of Prof Angus Kirkland. She is an elected member of Livery of the Worshipful Company of Armourers and Brasiers and sits on their Material Science Committee and Venture Prize Committee. She was Chair of the Institute of Physics EMAG group (2016-2018) and EMAG Honorary Secretary and Treasurer (2014-2016) and a member of council for the RMS (2014-2018). She is Director of the University of Manchester’s Electron Microscopy Centre in the School of Natural Sciences. She is also Director of the bp International Centre for Advanced Materials and $100M academic-industrial collaboration. She has published over 200 peer reviewed journal papers as an independent academic, including 44 as corresponding author, and 5 book chapters (H-index =59, over 16000 citations).

https://scholar.google.com/citations?user=rWFjXPEAAAAJ&hl=en

Axel Persson

Linköping University, Sweden; Mg doping of GaN by hot-wall metal-organic chemical vapour deposition.

No bio provided

Frances M Ross

Massachusetts Institute of Technology, USA

Talk title: Controlling structure and properties in 2D magnetic semiconductors via in situ TEM techniques

Frances M. Ross received her B.A. in Physics and Ph.D. in Materials Science from Cambridge University, UK. Her postdoc was at A.T.&T. Bell Laboratories, using in situ electron microscopy to visualize silicon oxidation and dislocation dynamics, after which she joined the National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, investigating other processes in situ including anodic etching of Si. She then moved to the IBM T. J. Watson Research Center where she imaged the growth of nanoscale materials using a microscope with deposition and focused ion beam capabilities, developed liquid cell microscopy for visualizing electrochemical processes, and measured growth and transport properties in a combined focused ion beam-scanning tunneling microscope system. She joined the MIT Department of Materials Science and Engineering in 2018 where her research continues to focus on nanostructure self-assembly, liquid cell microscopy, epitaxy and electrochemical processes.

Jean-Luc Rouviere

CEA Grenoble, France; Electron diffraction for atomic position, strain, electric and magnetic potential measurements

Jean-Luc ROUVIERE is a senior scientist at the French Alternative Energy and Atomic Energy Commission (CEA) where he uses and develops Transmission Electron Microscopy (TEM). After graduating from the Ecole Polytechnique in Paris in 1985, he joined CEA in Grenoble to complete his PhD on the determination of the atomic structure of Si grain boundaries using High Resolution TEM (HR-TEM). His PhD work earned him the Pierre Favard Prize. In 1990-1991, he was a visiting scientist at AT&T Bell Labs in Holmdell, US, where he applied QuantiTEM to As diffusion studies. In 2005, he and the research laboratory he belongs to, joined the Minatec characterization platform, which brings together various advanced characterization tools, such as FIB, TEM, SIMS, and Atom Probe. His main research achievements include (i) interface and (ii) strain map studies in semiconductors using various TEM techniques based on high-resolution images (TEM and STEM) or Electron Diffraction Maps (eDM), also known as 4D-STEM. He also promotes the use of Nanobeam Precession Electron Diffraction (N-PED). Currently, he is focusing his research activity on using eDM to obtain information about the electric, magnetic, and atomic structure of nano-objects or devices.

David S. Ginger

University of Washington, Seattle, USA; Multimodal Microscopy on Emerging Semiconductors for Photovoltaics and Neuromorphic Computing

Establishing structure-function relationships is a key challenge for new semiconductor materials ranging from the halide perovskites being commercialized for thin film photovoltaics to organic semiconductors being explored for neuromorphic computing applications. For example, in both families of materials, mixed ionic/electronic conduction takes place. This mixed conduction is often desirable in organic semiconductor films in the case of bioelectronics or neuromorphic computing. However, ionic motion is often deleterious to the performance and stability of materials like halide perovskite semiconductors. We describe applications of multimodal microscopy -- with a particular emphasis on combining scanning probes with optical and electron microscopy --  to explore local correlations between local microstructure, defect densities, conductivity, and ionic motion in these materials.  The results point the way to reduced halide vacancy concentrations and improved the stability of halide perovskites, while suggesting new ways for increasing the performance of organic mixed ionic/electronic conductors such as redox active conjugated polymers.

Julita Smalc-Koziorowska

Institute of High Pressure Physics 'Unipress'; Warsaw, Poland; Peculiarities of the strain relaxation in InGaN epilayers

Julita Smalc-Koziorowska received her PhD at Warsaw University of Technology in 2013. Now she works at the Laboratory of Semiconductor Characterization of the Institute of High Pressure Physics of Polish Academy of Sciences. Since 2010 she also works as a technologist at Top GaN Ltd – a company producing gallium nitride laser diodes. Her research interests span transmission electron microscopy characterization of semiconductor structures with a focus on tracking the mechanism of defect introduction in epitaxial nitride layers.

Michael Stöger-Pollach

Investigations of Optical Excitations in Semiconductors using Scanning Transmission

USTEM, TU Wien, Austria; Investigations of Optical Excitations in Semiconductors using Scanning Transmission Electron Microscopy

Michael Stöger-Pollach received his PhD in physics at TU Wien, Austria. He is professor for electron microscopy at TU Wien and guest professor at Charles-University Prague and CEITEC Brno. His main research achievements include the determination of optical properties by means of electron probes, improvements in energy-loss magnetic chiral dichroism (EMCD) experiments down to the atomic level, experimental detection of radiative losses and the corresponding radiation, as well as the description of interference effects in light emission of matter under electron beam irradiation.